t4 - lds -0 305 -3, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 1 of 6 2N5415UA C 2n5416ua compliant pn p silicon low - power transistor qualified per mil - prf - 19500/ 485 qualified levels : jan, jantx , jantxv and jans description this family of 2n5415 ua and 2n5416 ua epita xial planar transistors are military qualified up to a jans level for high - reliability applications . the u a package is hermetically sealed a nd provides a low profile for minimizing board height. these devices are also available in the long - leaded to -5 , s hort - leaded to - 39 and low profile u4 packaging. ua package also available in : to -5 package ( long - leaded) 2n5415 C 2n5416 to - 39 (to - 205ad) package ( short - leaded ) 2n5415 s C 2n5416 s u4 package (surface mount) 2n5415u 4 C 2n5416u 4 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 5415 through 2n 5416 series ? jan, jantx, jantxv, and jans qualifications are available per mil - prf - 19500/ 485 . (see part nomenclature for all available options.) ? rohs compliant applications / benefits ? general purpose transistors for low power applications requiring high frequency switching . ? l ow package profile ? military and other high - reliabili ty applications maximum ratings @ t a = +25 oc unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n5415 ua 2n5416 ua unit collector - emitter voltage v ceo 200 30 0 v collector - base voltage v cbo 200 3 50 v emitter - base voltage v ebo 6.0 6.0 v collector current i c 1.0 1.0 a operating & sto rage junction temperature range t j , t stg - 65 to +200 c thermal resistance junction - to - ambient r ? ja 234 o c/w thermal resistance junction - to - solder pad r ? j sp 80 o c/w total power dissipation @ t a = +25 c (1) @ t sp = + 25 c (2) p t 0.75 2 w notes : 1. derate linearly 4.29 mw/c for t a > +25c 2. derate linearly 12.5 mw/c for t sp > +25 c downloaded from: http:///
t4 - lds -0 305 -3, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 2 of 6 2N5415UA C 2n5416ua mechanical and packaging ? case: herm etically sealed ceramic package ? ter minals: gold plate over nickel ? marking: manufacturer's id, d ate c ode, p art number ? polar ity: pnp (see package outline) ? tape & reel option: per eia - 481 (c onsult factory for quantiti es ) ? weight: approximately 0.12 grams ? see package dimensions on last page. part nomenclature jan 2n5415 ua reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial surface mount package jedec type number (see electrical characteristics table) symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance i ceo c ollector cutoff current, base open i cex c ollector cutoff current, circuit between base and emitter i ebo e mitter cutoff current, collector open h fe c ommon - emitter static forward current transfer ratio v ceo c ollector - emitter voltage, base open v cbo c ollector - emitter voltage, emitter open v ebo e mitter - base voltage, collector open downloaded from: http:///
t4 - lds -0 305 -3, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 3 of 6 2N5415UA C 2n5416ua electrical characteristics @ t a = +25 c, unless otherwise noted off character istics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage v (br)ceo 20 0 300 v i c = 5 0 ma, i b = 5 ma, l = 25 mh; f = 30 C 60 hz 2n5415 ua 2n5416 ua emitter - base cutoff current v eb = 6 .0 v i ebo 20 a collector - emitter cutoff current i cex 50 a v ce = 20 0 v, v be = 1.5 v v ce = 30 0 v, v be = 1.5 v 2n5415 ua 2n5416 ua collector - emitter cutoff current i ceo1 50 a v ce = 150 v v ce = 250 v 2n5415 ua 2n5416 ua collector - emitter cutoff current i ceo2 1 ma v ce = 200 v v ce = 300 v 2n5415 ua 2n5416 ua collector - base cutoff current i cbo1 50 a v cb = 175 v v cb = 280 v 2 n5415 ua 2n5416 ua v cb = 200 v v cb = 350 v 2n5415 ua 2n5416 ua i cbo2 500 a v cb = 175 v, t a = +150 oc v cb = 280 v, t a = +150 oc 2n5415 ua 2n5416 ua i cbo3 1 ma on characteristics parameters / test conditions symbol min. max. unit forward - current transfer ratio i c = 50 ma, v ce = 10 v i c = 1 m a, v ce = 10 v i c = 5 0 m a, v ce = 10 v , t a = +150 oc h fe 30 15 15 120 collector - emitter saturation voltage i c = 50 m a, i b = 5 ma v ce(sat) 2.0 v base - emitter voltage non - saturation i c = 50 m a, v ce = 10 v v be 1.5 v dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - |h fe | 3 15 circuit forward current transfer ratio i c = 1 0 ma, v ce = 10 v, f = 5 mhz small - signal short circuit forward - current h fe 25 transfer ratio i c = 5 ma, v ce = 10 v, f 1 khz output capacitance v cb = 10 v, i e = 0, 100 khz f 1 m hz c obo 15 pf downloaded from: http:///
t4 - lds -0 305 -3, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 4 of 6 2N5415UA C 2n5416ua electrical characteristics @ t a = +25 c unless otherwise noted. (continued) switching charac teristics parameters / test conditions symbol min. max. unit turn - on time v cc = 200 v, i c = 5 0 m a, i b1 = 5 ma t on 1 s turn - off time v cc = 200 v, i c = 5 0 m a, i b1 = i b2 = 5 ma t off 10 s safe operating area (see soa graph below and mil - std - 750, method 3053 ) dc tests t c = +25 c, t p = 0.4 s, 1 cycle test 1 v ce = 1 0 v, i c = 0.3 a test 2 v ce = 100 v, i c = 3 0 ma test 3 (2N5415UA only) v ce = 20 0 v, i c = 12 ma test 4 (2n5416ua only) v ce = 3 00 v, i c = 5 ma v ce C collector C emitter voltage C v maximum safe operating area (t j = 200 oc) i c C collector current - a downloaded from: http:///
t4 - lds -0 305 -3, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 5 of 6 2N5415UA C 2n5416ua graphs time (s) figure 1 thermal impedance graph ( r ? ja ) theta ( o c/w) downloaded from: http:///
t4 - lds -0 305 -3, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 6 of 6 2N5415UA C 2n5416ua package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for information only. 3. dimension "ch" controls the overall package thickness. when a window lid is used, dimension "ch" must increase by a minimum of 0 .010 inch (0.254 mm) and a maximum of 0 .040 inch (1.020 mm). 4. the corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. 5. dimensions " lw2" minimum and "l3" minimum and the appropriate castellation length define an unobstructed three - dimensional space traversing all of the ceramic layers in which a castellation was designed. (castellations are required on bottom two layers, optional on top ceramic layer.) dimension " lw2" maximum and "l3" maximum define the maximum width and depth of the castellation at any point on its surface. measurement of these dimensions may be made prior to solder dipping. 6. the co - planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed 0 .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimen sions symbol inches millimeters note min max min max bl 0 .215 0 .225 5.46 5.71 bl2 - 0 .225 - 5.71 bw 0 .145 0 .155 3.68 3.93 bw2 - 0 .155 - 3.93 ch 0 .061 0 .075 1.55 1.90 3 l3 0 .003 0 .007 0.08 0.18 5 lh 0 .029 0 .042 0.74 1.07 ll1 0 .032 0 .048 0 .81 1.22 ll2 0 .072 0 .088 1.83 2.23 ls 0 .045 0 .055 1.14 1.39 lw 0 .022 0 .028 0.56 0.71 lw2 0 .006 0 .022 0.15 0.56 5 pin no. 1 2 3 4 transistor collector emitter base n/c downloaded from: http:///
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